H10W 20/0552
By diffusing metallic dopants to react with dielectrics
Official title: {by diffusing metallic dopants to react with dielectrics}
H10W20/0552 (By diffusing metallic dopants to react with dielectrics) appears on 314 US grants and 370 published applications in this corpus.
Search patents in H10W- Granted patents
- 314
- Published applications
- 370
- Assignees
- 66
- Inventors
- 437
- Latest grant
- 24 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 8 |
| 2008 | 2 | 12 |
| 2009 | 4 | 20 |
| 2010 | 11 | 25 |
| 2011 | 18 | 26 |
| 2012 | 22 | 27 |
| 2013 | 16 | 14 |
| 2014 | 29 | 40 |
| 2015 | 26 | 38 |
| 2016 | 32 | 29 |
| 2017 | 37 | 25 |
| 2018 | 28 | 27 |
| 2019 | 28 | 14 |
| 2020 | 14 | 16 |
| 2021 | 11 | 9 |
| 2022 | 11 | 13 |
| 2023 | 9 | 10 |
| 2024 | 6 | 3 |
| 2025 | 7 | 7 |
| 2026 | 2 | 6 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Doping processes in metal interconnect structures24 Feb 2026US 12,564,039 B2Lam Research Corporation
- Barrier schemes for metallization using manganese and graphene20 Jan 2026US 12,532,719 B2Tokyo Electron Limited
- Self-forming barrier for use in air gap formation25 Nov 2025US 12,482,704 B2Adeia Semiconductor Solutions LLC
- Hybrid wafer bonding method25 Nov 2025US 12,482,786 B2Yangtze Memory Technologies Co., Ltd.
- Hybrid wafer bonding method and structure thereof4 Nov 2025US 12,463,177 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structures with metal silicate dielectrics25 Jun 2026US 2026/0182353 A1International Business Machines Corporation
- Doped conductive features of an interconnect structure and methods of manufacturing the same18 Jun 2026US 2026/0173837 A1
- Interconnect structure, electronic device including the same, and electronic apparatus including the same18 Jun 2026US 2026/0173855 A1Ajou University Industry-Academic Cooperation Foundation
- Hybrid wafer bonding method and structure thereof26 Mar 2026US 2026/0090437 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Self-forming barrier for use in air gap formation320US 10,229,851 B2International Business Machines Corporation · 2019
- Semiconductor device with a barrier film which contains manganese62US 7,304,384 B2Semiconductor Technology Academic Research Center · 2007
- Method of forming metal interconnection39US 9,613,856 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Copper alloys and liquid-crystal display device38US 7,626,665 B2Advanced Interconnect Materials, LLC · 2009
- Method of forming metal interconnection37US 9,972,529 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018