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US 12,532,719 B2Granted
Barrier schemes for metallization using manganese and graphene
AssigneeTokyo Electron Limited
InventorRobert D. Clark
Life of this patent
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Abstract
A method of forming a semiconductor device includes providing a substrate having a patterned film including manganese; depositing a graphene layer over exposed surfaces of the patterned film; depositing a dielectric layer containing silicon and oxygen over the graphene layer; and heat-treating the substrate to form a manganese-containing diffusion barrier region between the graphene layer and the dielectric layer.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a substrate having a patterned film comprising manganese;
- depositing a graphene layer over exposed surfaces of the patterned film, wherein the graphene layer comprises a plurality of defects;
- depositing a dielectric layer containing silicon and oxygen over the graphene layer;
- and
- heat-treating the substrate to form a plurality of manganese-containing diffusion barrier regions between the graphene layer and the dielectric layer, wherein each of the plurality of manganese-containing diffusion barrier regions is formed at a respective one of the plurality of defects, and wherein the plurality of manganese-containing diffusion barrier regions are discontinuous regions.
2 more elements
A method of forming a semiconductor device, the method comprising:
- providing a substrate containing a metallization layer and a first dielectric layer containing silicon and oxygen;
- depositing a barrier layer over the metallization layer and over the first dielectric layer;
- depositing a conductive film containing manganese over the barrier layer;
- heat-treating the substrate for a first time to form a first manganese-containing diffusion barrier region between the barrier layer and the first dielectric layer;
- patterning and etching the conductive film to form a patterned conductive film over the first manganese-containing diffusion barrier region;
- depositing a graphene layer over a sidewall surface and on a top surface of the patterned conductive film;
- depositing a second dielectric layer containing silicon and oxygen on the graphene layer;
- and
- heat-treating the substrate for a second time to form a second manganese-containing diffusion barrier region.
6 more elements
A method of forming a semiconductor device, the method comprising:
- providing a substrate having a patterned film comprising manganese;
- depositing a graphene layer over exposed surfaces of the patterned film, wherein the graphene layer comprises a plurality of defects;
- depositing a dielectric layer containing silicon and oxygen over the graphene layer;
- and
- heat-treating the substrate to form a plurality of stop plugs at the plurality of defects, wherein the plurality of stop plugs comprise manganese-containing material.
2 more elements
Dependencies are inferred from the claim text.