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US 9,613,856 B1Granted
Method of forming metal interconnection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi Yang, Ming-Han Lee, Shau-Lin Shue, Tz-Jun Kuo
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Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a first conductive feature over a substrate, forming a dielectric layer over the first conductive feature, forming a trench in the dielectric layer, forming a first barrier layer in the trench, applying a thermal treatment to convert a first portion of the barrier layer to a second barrier layer, exposing the first conductive feature in the trench while a portion of the second barrier layer is disposed over the dielectric layer and forming a second conductive feature in the trench.
Claims20
A method comprising:
- forming a first conductive feature over a substrate;
- forming a dielectric layer over the first conductive feature;
- forming a trench in the dielectric layer, wherein the trench has a first width in its lower portion and a second width in its upper portion, wherein the second width is greater than the first width, wherein the first conductive feature is exposed within the trench;
- forming a first barrier layer in the trench, wherein the first barrier layer has a first portion disposed over the dielectric layer and a second portion disposed over the first conductive feature;
- applying a thermal treatment to convert the first portion of the first barrier layer to a second barrier layer;
- after the thermal treatment, exposing the first conductive feature in the trench by removing the second portion of the first barrier layer while keeping a portion of the second barrier layer disposed over the dielectric layer;
- and
- forming a second conductive feature in the trench after the exposing of the first conductive feature.
5 more elements
A method comprising:
- forming a dielectric layer over a first conductive feature disposed on a substrate;
- forming a trench in the dielectric layer, wherein the trench has a first width in its upper portion and a second width in its lower portion, wherein the first width is greater than the second width, wherein the first conductive feature is exposed within the trench;
- forming a first barrier layer in the trench, wherein a first portion of the first barrier layer is formed along a sidewall surface of the trench defined by the dielectric layer and a second portion of the first barrier layer is formed along a bottom surface of the trench defined by the first conductive feature;
- converting the first portion of the first barrier layer into a second barrier layer, wherein the second barrier layer is formed of a different material than the first barrier layer;
- after the converting of the first portion of the first barrier layer, exposing the first conductive feature in the trench by performing a wet etch process to remove the second portion of the first barrier layer while keeping a portion of the second barrier layer disposed over the dielectric layer;
- and
- forming a second conductive feature in the trench after the exposing of the first conductive feature.
4 more elements
A method comprising:
- forming a dielectric layer over a first conductive feature disposed on a substrate;
- forming a trench in the dielectric layer, wherein the trench has a first width in its upper portion and a second width in its lower portion, wherein the first width is greater than the second width, wherein the first conductive feature is exposed within the trench;
- forming a first barrier layer in the trench, wherein a first portion of the first barrier layer is formed along a sidewall surface of the trench defined by the dielectric layer and a second portion of the first barrier layer is formed along a bottom surface of the trench defined by the first conductive feature;
- applying a thermal treatment to the first barrier layer such that the first portion and the second portion of the first barrier layer comprise different materials;
- selectively etching the second portion of the first barrier layer after the applying of the thermal treatment, thereby exposing the first conductive feature in the trench while keeping the first portion of the first barrier layer disposed over the dielectric layer;
- and
- forming a second conductive feature in the trench after the selectively etching of the second portion of the first barrier layer.
4 more elements
Dependencies are inferred from the claim text.