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US 2026/0182353 A1Published application
Interconnect structures with metal silicate dielectrics
AssigneeInternational Business Machines Corporation
InventorsSON NGUYEN, Vijay Narayanan, Takeshi Nogami
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Abstract
A semiconductor structure including a back-end-of-line (BEOL) interconnect structure having a plurality of wiring levels. A wiring level of the plurality of wiring levels including a conductive line and two or more vias electrically connecting two or more levels of the plurality of wiring levels. The semiconductor structure having a low-k MxSiyOz dielectric associated with the conductive line and the two or more vias; the “M” is a metal such as manganese or other disclosed materials.
Claims20
A semiconductor structure comprising:
- a back-end-of-line (BEOL) interconnect structure comprising:
- a plurality of wiring levels, wherein a wiring level of the plurality of wiring levels comprises:
- a conductive line;
- and
- two or more vias electrically connecting two or more levels of the plurality of wiring levels;
- and
- a low-k MxSiyOz dielectric associated with the conductive line and the two or more vias, where M is a metal.
4 more elements
A semiconductor structure comprising:
- an air gap back-end-of-line (BEOL) interconnect structure comprising:
- a plurality of wiring levels, wherein a wiring level of the plurality of wiring levels comprises:
- a conductive line;
- two or more vias electrically connecting two or more levels of the plurality of wiring levels;
- and
- an air gap located between the two or more vias;
- and
- a low-k MxSiyOz dielectric associated with the conductive line and the two or more vias, where M is a metal.
5 more elements
Dependencies are inferred from the claim text.