H10W 20/034
Bottomless barrier, adhesion or liner layers
Official title: {bottomless barrier, adhesion or liner layers}
H10W20/034 (Bottomless barrier, adhesion or liner layers) appears on 932 US grants and 1,110 published applications in this corpus.
Search patents in H10W- Granted patents
- 932
- Published applications
- 1,110
- Assignees
- 160
- Inventors
- 1,677
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 9 | 0 |
| 1997 | 2 | 0 |
| 1998 | 9 | 0 |
| 1999 | 16 | 0 |
| 2000 | 18 | 0 |
| 2001 | 23 | 16 |
| 2002 | 28 | 42 |
| 2003 | 38 | 33 |
| 2004 | 38 | 40 |
| 2005 | 34 | 66 |
| 2006 | 31 | 57 |
| 2007 | 30 | 69 |
| 2008 | 38 | 57 |
| 2009 | 35 | 43 |
| 2010 | 50 | 43 |
| 2011 | 41 | 26 |
| 2012 | 30 | 27 |
| 2013 | 25 | 13 |
| 2014 | 28 | 25 |
| 2015 | 24 | 19 |
| 2016 | 24 | 32 |
| 2017 | 25 | 24 |
| 2018 | 33 | 28 |
| 2019 | 28 | 28 |
| 2020 | 25 | 42 |
| 2021 | 34 | 60 |
| 2022 | 39 | 91 |
| 2023 | 51 | 77 |
| 2024 | 44 | 51 |
| 2025 | 49 | 50 |
| 2026 | 21 | 51 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carbon-based liner to reduce contact resistance25 Aug 2026US 12,721,119 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having verticle conductive graphene and method for forming the same25 Aug 2026US 12,721,154 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Mitigating pattern collapse4 Aug 2026US 12,701,975 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor interconnection structures and methods of forming the same21 Jul 2026US 12,690,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact for electronic component1 Oct 2026US 2026/0305281 A1STMicroelectronics (Rousset) SAS
- Interconnection structure and methods of forming the same24 Sep 2026US 2026/0293631 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure including aligned interconnect layers and method for manufacturing the same24 Sep 2026US 2026/0293636 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having vertical conductive graphene and method for forming the same17 Sep 2026US 2026/0282857 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having graphene interconnect17 Sep 2026US 2026/0282887 A1Tokyo Electron Limited
Most cited
By later US patents
- Structures and methods for integration of ultralow-k dielectrics with improved reliability554US 7,088,003 B2International Business Machines Corporation · 2006
- Barrier first method for single damascene trench applications546US 7,186,648 B1Novellus Systems, Inc. · 2007
- Method of using a barrier sputter reactor to remove an underlying barrier layer543US 6,498,091 B1APPLIED Materials.Inc. · 2002
- Integration of ALD tantalum nitride for copper metallization495US 7,049,226 B2APPLIED Materials.Inc. · 2006
- Interconnect structure formed in porous dielectric material with minimized degradation and electromigration395US 6,528,409 B1Advanced Micro Devices, Inc. · 2003