H10W 10/0145
Of trenches having shapes other than rectangular or v-shape
Official title: {of trenches having shapes other than rectangular or V-shape (H10W10/0143 takes precedence)}
H10W10/0145 (Of trenches having shapes other than rectangular or v-shape) appears on 1,952 US grants and 1,830 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,952
- Published applications
- 1,830
- Assignees
- 312
- Inventors
- 3,463
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 6 | 0 |
| 1982 | 7 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 11 | 0 |
| 1986 | 8 | 0 |
| 1987 | 11 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 6 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 10 | 0 |
| 1994 | 10 | 0 |
| 1995 | 13 | 0 |
| 1996 | 7 | 0 |
| 1997 | 15 | 0 |
| 1998 | 28 | 0 |
| 1999 | 77 | 0 |
| 2000 | 70 | 0 |
| 2001 | 93 | 27 |
| 2002 | 80 | 100 |
| 2003 | 90 | 64 |
| 2004 | 72 | 87 |
| 2005 | 66 | 94 |
| 2006 | 62 | 85 |
| 2007 | 50 | 84 |
| 2008 | 50 | 94 |
| 2009 | 47 | 87 |
| 2010 | 64 | 78 |
| 2011 | 86 | 65 |
| 2012 | 47 | 80 |
| 2013 | 65 | 81 |
| 2014 | 84 | 70 |
| 2015 | 77 | 74 |
| 2016 | 64 | 52 |
| 2017 | 59 | 48 |
| 2018 | 54 | 42 |
| 2019 | 46 | 70 |
| 2020 | 78 | 90 |
| 2021 | 67 | 73 |
| 2022 | 54 | 63 |
| 2023 | 50 | 70 |
| 2024 | 58 | 58 |
| 2025 | 48 | 62 |
| 2026 | 31 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Isolation features for semiconductor devices and methods of fabricating the same29 Sep 2026US 12,751,075 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Field-effect transistor crescent-shaped dielectric isolation22 Sep 2026US 12,745,434 B2International Business Machines Corporation
- Semiconductor devices and methods of manufacturing the same8 Sep 2026US 12,733,156 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same8 Sep 2026US 12,733,192 B2Silergy Semiconductor Technology (Hangzhou) LTD
- High voltage semiconductor device including isolation region1 Sep 2026US 12,727,455 B2DB HiTek Co., Ltd.
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Cpode landing structure on insulator substrate and the methods of forming the same8 Oct 2026US 2026/0314041 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Through trench isolation for die24 Sep 2026US 2026/0293626 A1Texas Instruments Incorporated
- Plasma etching processes3 Sep 2026US 2026/0262455 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and fabrication method thereof13 Aug 2026US 2026/0239679 A1Nanya Technology Corporation
Most cited
By later US patents
- Semiconductor method and device with mixed orientation substrate566US 7,298,009 B2Infineon Technologies AG · 2007
- Shallow trench isolation technique396US 5,719,085 AIntel Corporation · 1998
- Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography323US 5,013,680 AMicron Technology, Inc. · 1991
- Shallow trench isolation filled by high density plasma chemical vapor deposition309US 6,037,018 ATaiwan Semiconductor Maufacturing Company, Ltd. · 2000
- Method for etching a trench having rounded top and bottom corners in a silicon substrate270US 6,235,643 B1APPLIED Materials.Inc. · 2001