H10W 10/0147
The shapes being altered by a local oxidation of silicon process
Official title: {the shapes being altered by a local oxidation of silicon process, e.g. trench corner rounding by LOCOS}
H10W10/0147 (The shapes being altered by a local oxidation of silicon process) appears on 272 US grants and 195 published applications in this corpus.
Search patents in H10W- Granted patents
- 272
- Published applications
- 195
- Assignees
- 109
- Inventors
- 544
- Latest grant
- 8 Sep 2026
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| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
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| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 8 | 0 |
| 1995 | 7 | 0 |
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| 1998 | 8 | 0 |
| 1999 | 12 | 0 |
| 2000 | 21 | 0 |
| 2001 | 20 | 7 |
| 2002 | 18 | 37 |
| 2003 | 31 | 31 |
| 2004 | 31 | 26 |
| 2005 | 20 | 21 |
| 2006 | 13 | 21 |
| 2007 | 8 | 6 |
| 2008 | 8 | 7 |
| 2009 | 6 | 2 |
| 2010 | 5 | 1 |
| 2011 | 3 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 2 | 3 |
| 2015 | 2 | 4 |
| 2016 | 2 | 1 |
| 2017 | 2 | 1 |
| 2018 | 3 | 2 |
| 2019 | 0 | 1 |
| 2020 | 3 | 7 |
| 2021 | 2 | 2 |
| 2022 | 4 | 5 |
| 2023 | 2 | 5 |
| 2024 | 3 | 2 |
| 2025 | 1 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method for manufacturing the same8 Sep 2026US 12,733,192 B2Silergy Semiconductor Technology (Hangzhou) LTD
- Semiconductor device and method for manufacturing the same24 Feb 2026US 12,563,762 B2Silergy Semiconductor Technology (Hangzhou) LTD
- Method for fabricating semiconductor device with chelating agent24 Jun 2025US 12,341,054 B2Nanya Technology Corporation
- Method for forming a trench in a first semiconductor layer of a multi-layer system17 Sep 2024US 12,094,717 B2Robert Bosch GmbH
- Method for making high-voltage thick gate oxide23 Apr 2024US 11,967,520 B2Hua Hong Semiconductor (Wuxi) Limited
- Semiconductor device and method for manufacturing the same4 Jun 2026US 2026/0156853 A1Silergy Semiconductor Technology (Hangzhou) LTD
- Shallow trench isolation processing with local oxidation of silicon10 Apr 2025US 2025/0120169 A1
- Sti loss mitigation by radical oxidation treatment24 Oct 2024US 2024/0355906 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked fet substrate contact29 Feb 2024US 2024/0071811 A1International Business Machines Corporation
- Method for fabricating semiconductor device with pre-cleaning treatment5 Oct 2023US 2023/0317508 A1Nanya Technology Corporation
Most cited
By later US patents
- Shallow trench isolation technique396US 5,719,085 AIntel Corporation · 1998
- Method for forming semiconductor device isolating regions113US 5,096,848 ASharp Kabushiki Kaisha · 1992
- Fabrication of a shallow trench isolation by plasma oxidation103US 6,368,941 B1United Microelectronics Corp. · 2002
- Method of achieving improved STI gap fill with reduced stress96US 7,118,987 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2006
- Oxide deglaze before sidewall oxidation of mesa or trench94US 5,863,827 ATexas Instruments Incorporated · 1999