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US 2024/0355906 A1Published application
Sti loss mitigation by radical oxidation treatment
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Hua Hsu, Chia-I Lin, Hsiu-Hao Tsao, Kai-Min Chien, Chen-Huang Huang, An Chyi Wei, Ryan Chia-Jen Chen
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Abstract
Embodiments include a method and device resulting from the method, including using a radical oxidation process to oxidize a spacer layer which lines the opening after removing a dummy gate electrode. The oxidized layer is removed by an etching process. An STI region disposed below the dummy gate electrode may be partially etched.
Claims20
A method comprising:
- removing a dummy gate over a semiconductor fin, to reveal a spacer lining an opening;
- oxidizing an outer layer of the spacer by a radical treatment process to form an oxidized layer of the spacer;
- etching the oxidized layer of the spacer to remove the oxidized layer;
- and
- forming a replacement metal gate in the opening.
2 more elements
A method comprising:
- performing a radical oxidation process on a first vertical liner of an opening, the radical oxidation process oxidizing a first layer of the first vertical liner;
- etching the first layer to remove the first layer, a height to width ratio of the opening being lessened by etching the first layer;
- depositing a gate dielectric in the opening on the first vertical liner;
- and
- depositing a gate electrode over the gate dielectric.
2 more elements
A device comprising:
- a first channel region of a transistor disposed over a fin, the fin comprising a semiconductor material extending in a first direction;
- a gate structure lining the first channel region and extending over an isolation region in a second direction perpendicular to the first direction, a first portion of the gate structure extending downward into an indent in an upper surface of the isolation region;
- and
- an epitaxial structure embedded in the fin on either side of the first channel region, the epitaxial structure laterally surrounded by a first interlayer dielectric (ILD).
1 more element
Dependencies are inferred from the claim text.