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US 12,341,054 B2Granted
Method for fabricating semiconductor device with chelating agent
AssigneeNanya Technology Corporation
InventorsWei-Chen Pan, Chun-Wei Wang
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Abstract
The present application discloses a method for fabricating the semiconductor device. The method for fabricating the semiconductor device includes forming a first dielectric layer on a substrate; forming a feature opening to exposing the substrate; performing a pre-cleaning treatment including a pre-cleaning solution to the feature opening; performing a cleaning process to the feature opening; and forming a conductive feature in the feature opening. The pre-cleaning solution includes a chelating agent and a corrosion inhibitor.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming a first dielectric layer on a substrate;
- forming a feature opening to exposing the substrate;
- performing a pre-cleaning treatment comprising a pre-cleaning solution to the feature opening;
- performing a cleaning process to the feature opening;
- and
- forming a conductive feature in the feature opening;
- wherein the pre-cleaning solution comprises a chelating agent and a corrosion inhibitor;
- wherein a process time of the pre-cleaning treatment is about 2 minutes;
- wherein the chelating agent comprises ethylenediaminetetraacetic acid, polyacrylates, carbonates, phosphonates, gluconates, N,N′-bis(2-hydroxyphenyl)ethylenediiminodiacetic acid, triethylenetetranitrilohexaacetic acid, desferriferrioxamin B, N,N′,N″-tris [2-(N-hydroxycarbonyl)ethyl]-1,3,5-benzenetricarboxamide, or ethylenediaminediorthohydroxyphenylacetic acid.
6 more elements
Dependencies are inferred from the claim text.