H10P 95/906
For altering the shape of semiconductors
Official title: {for altering the shape of semiconductors, e.g. smoothing the surface}
H10P95/906 (For altering the shape of semiconductors) appears on 372 US grants and 438 published applications in this corpus.
Search patents in H10P- Granted patents
- 372
- Published applications
- 438
- Assignees
- 153
- Inventors
- 850
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 2 |
| 2002 | 2 | 4 |
| 2003 | 4 | 10 |
| 2004 | 7 | 16 |
| 2005 | 11 | 8 |
| 2006 | 10 | 11 |
| 2007 | 8 | 9 |
| 2008 | 6 | 13 |
| 2009 | 8 | 10 |
| 2010 | 10 | 12 |
| 2011 | 7 | 14 |
| 2012 | 12 | 14 |
| 2013 | 15 | 18 |
| 2014 | 13 | 23 |
| 2015 | 19 | 27 |
| 2016 | 33 | 56 |
| 2017 | 40 | 44 |
| 2018 | 35 | 15 |
| 2019 | 22 | 22 |
| 2020 | 22 | 26 |
| 2021 | 15 | 16 |
| 2022 | 20 | 21 |
| 2023 | 13 | 22 |
| 2024 | 10 | 11 |
| 2025 | 13 | 9 |
| 2026 | 5 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate treatment method, substrate treatment apparatus, and computer storage medium8 Sep 2026US 12,733,422 B2Tokyo Electron Limited
- Curved semiconductor chip and method for forming the same4 Aug 2026US 12,701,825 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wafer bonding process with reduced overlay distortion26 May 2026US 12,642,013 B2Tokyo Electron Limited
- Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors17 Mar 2026US 12,581,719 B2International Business Machines Corporation
- Nitride-containing STI liner for SIGE channel6 Jan 2026US 12,518,976 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Curved semiconductor chip and method for forming the same8 Oct 2026US 2026/0314120 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247934 A1Shin-Etsu Handotai Co., Ltd.
- Semiconductor structure and fabrication method thereof13 Aug 2026US 2026/0239659 A1Nanya Technology Corporation
- Gate structures and methods of forming7 May 2026US 2026/0130183 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride-containing sti liner for sige channel16 Apr 2026US 2026/0107746 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device423US 9,362,137 B2Samsung Electronics Co., Ltd. · 2016
- Process for producing semiconductor substrate by heating to flatten an unpolished surface142US 5,869,387 ACanon Kabushiki Kaisha · 1999
- Thermal management systems and methods for wafer processing systems114US 9,741,593 B2APPLIED Materials.Inc. · 2017
- Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same84US 6,171,982 B2Canon Kabushiki Kaisha · 2001
- Power semiconductor device having RESURF layer64US 6,693,338 B2Kabushiki Kaisha Toshiba · 2004