Curved semiconductor chip and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJheng-Hong Jiang, Shing-Huang Wu, Chia-Wei Liu
Life of this patent
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side; a device layer, disposed on the first side of the substrate; an interconnect layer, disposed on the device layer; a luminous layer, disposed on the interconnect layer; and a capping layer, conformally disposed on the second side of the bended substrate. The semiconductor device is convexly curved.
Claims20
A semiconductor device, comprising:
- a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side;
- a device layer, disposed on the first side of the substrate;
- an interconnect layer, disposed on the device layer;
- a luminous layer, disposed on the interconnect layer;
- and
- a capping layer, conformally disposed on the second side of the substrate,
- wherein the semiconductor device is convexly curved, wherein the capping layer includes a plurality of openings disposed within the plurality of trenches correspondingly, and a first thickness of the capping layer within one of the plurality of trenches is substantially different from a second thickness of the capping layer within another one of the plurality of trenches.
A semiconductor device, comprising:
- a substrate, having a first surface and a second surface opposite to the first surface, wherein the substrate includes a first trench and a second trench at the second surface;
- a transistor layer, conformally covering the first surface of the substrate;
- an interconnect layer, conformally covering the transistor layer;
- an optical device layer, conformally covering the interconnect layer;
- and
- a capping layer, conformally covering the second surface of the substrate, wherein a first thickness of the capping layer within the first trench is substantially different from a second thickness of the capping layer within the second trench.
A semiconductor device, comprising:
- a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of protrusions at the second side;
- a device layer, disposed on the first side of the substrate;
- an interconnect layer, disposed on the device layer;
- a luminous layer, disposed on the interconnect layer;
- and
- a capping layer, conformally covering the plurality of protrusions and including a plurality of openings alternately disposed with the plurality of protrusions, wherein the capping layer has a first portion connected with a second portion, and a thickness of the second portion is greater than a thickness of the first portion, wherein the first portion of the capping layer surrounds a first opening, and the second portion of the capping layer surrounds a second opening.
Dependencies are inferred from the claim text.