Back to results
US 5,869,387 AGranted
Process for producing semiconductor substrate by heating to flatten an unpolished surface
AssigneeCanon Kabushiki Kaisha
InventorsNobuhiko Sato, Takao Yonehara, Kiyofumi Sakaguchi
Life of this patent
Estimating the term…
Abstract
A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
Claims24
A process for producing a semiconductor substrate comprising:
- flattening an unpolished surface of a substrate, the surface comprising a monocrystalline semiconductor and having irregularities of several nm to several tens of nm in height and several nm to several hundreds of nm in cycle, the flattening comprising heat-treating the surface at a temperature lower than the melting point of the monocrystalline semiconductor in a reducing atmosphere comprising hydrogen to reduce the difference in height of the surface to 2 nm or less.
A process for producing a semiconductor substrate comprising:
- heat-treating a substrate having a monocrystalline semiconductor layer on an insulating layer on a support member or a light transmitting support member at a temperature lower than the melting point of the monocrystalline semiconductor layer in a reducing atmosphere comprising hydrogen to flatten an unpolished surface of the monocrystalline semiconductor layer.
A process for producing a semiconductor substrate comprising:
- flattening an unpolished surface of a substrate, the surface comprising a monocrystalline semiconductor and having irregularities of up to 30 nm, the flattening comprising heat-treating the surface at a temperature not lower than 500.degree. C. and lower than the melting point of the monocrystalline semiconductor in a reducing atmosphere consisting essentially of (a) hydrogen, or (b) hydrogen and an inert gas, to reduce the difference in height of the surface to 2 nm or less.
Dependencies are inferred from the claim text.