Back to results
US 2026/0107746 A1Published application
Nitride-containing sti liner for sige channel
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Wen Chiu, Szu-Ying Chen, Lun-Kuang Tan
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.
Claims20
An integrated circuit (IC) device, comprising:
- a semiconductor structure disposed over a substrate;
- a first liner disposed on side surfaces of the semiconductor structure, wherein the first liner contains crystal silicon and an implanted material that is implanted into the crystal silicon;
- and
- a second liner disposed on a side surface of the first liner, wherein the second liner contains silicon oxide.
1 more element
An integrated circuit (IC) device, comprising:
- a semiconductor structure disposed over a substrate, wherein the semiconductor structure protrudes out of the substrate in a vertical direction in a cross-sectional side view;
- an epitaxial silicon layer disposed on a side surface of the semiconductor structure;
- and
- a liner disposed on a side surface of the epitaxial silicon layer, wherein the liner contains silicon oxide and nitrogen that is implanted into the silicon oxide, and wherein the liner is thicker than the epitaxial silicon layer in a horizontal direction in the cross-sectional side view.
1 more element
An integrated circuit (IC) device, comprising:
- a semiconductor structure that protrudes out of a substrate;
- a first liner disposed on a side surface of the semiconductor structure, wherein the first liner has a first material composition;
- a second liner disposed on a side surface of the first liner, wherein the second liner has a second material composition different from the first material composition;
- and
- a third liner disposed on a side surface of the second liner, wherein the third liner has a third material composition different from the first material composition and from the second material composition.
2 more elements
Dependencies are inferred from the claim text.