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US 6,171,982 B2Granted
Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
AssigneeCanon Kabushiki Kaisha
InventorNobuhiko Sato
Life of this patent
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Abstract
An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.
Claims30
A method for heat-treating an SOI substrate having a silicon surface comprising a step of:
- heat-treating said SOI substrate in a hydrogen-containing reducing atmosphere, with keeping said SOI substrate in a state disposed opposite to a planar surface comprising a material comprised of a non-oxidized silicon as a main component with a predetermined distance separating them.
Dependencies are inferred from the claim text.