H10P 95/90
Thermal treatments
Official title: Thermal treatments, e.g. annealing or sintering
H10P95/90 (Thermal treatments) appears on 5,048 US grants and 5,567 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,048
- Published applications
- 5,567
- Assignees
- 986
- Inventors
- 8,322
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 7 | 0 |
| 1979 | 9 | 0 |
| 1980 | 11 | 0 |
| 1981 | 14 | 0 |
| 1982 | 14 | 0 |
| 1983 | 19 | 0 |
| 1984 | 20 | 0 |
| 1985 | 29 | 0 |
| 1986 | 24 | 0 |
| 1987 | 25 | 0 |
| 1988 | 12 | 0 |
| 1989 | 17 | 0 |
| 1990 | 11 | 0 |
| 1991 | 14 | 0 |
| 1992 | 6 | 0 |
| 1993 | 15 | 0 |
| 1994 | 10 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 20 | 0 |
| 2000 | 28 | 0 |
| 2001 | 42 | 11 |
| 2002 | 57 | 60 |
| 2003 | 44 | 78 |
| 2004 | 73 | 124 |
| 2005 | 65 | 106 |
| 2006 | 79 | 91 |
| 2007 | 59 | 92 |
| 2008 | 55 | 126 |
| 2009 | 64 | 108 |
| 2010 | 96 | 101 |
| 2011 | 89 | 131 |
| 2012 | 94 | 131 |
| 2013 | 112 | 184 |
| 2014 | 165 | 260 |
| 2015 | 295 | 526 |
| 2016 | 450 | 597 |
| 2017 | 559 | 533 |
| 2018 | 439 | 430 |
| 2019 | 423 | 383 |
| 2020 | 400 | 402 |
| 2021 | 285 | 220 |
| 2022 | 201 | 202 |
| 2023 | 175 | 195 |
| 2024 | 156 | 184 |
| 2025 | 141 | 174 |
| 2026 | 94 | 118 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Substrate processing method and substrate processing apparatus6 Oct 2026US 12,757,648 B2Tokyo Electron Limited
- Thermal treatment apparatus, thermal treatment method, and storage medium6 Oct 2026US 12,757,670 B2Tokyo Electron Limited
- Heating/cooling device and heating/cooling method6 Oct 2026US 12,757,671 B2Tokyo Electron Limited
- Rapid and precise temperature control for thermal etching6 Oct 2026US 12,757,675 B2Lam Research Corporation
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Curved semiconductor chip and method for forming the same8 Oct 2026US 2026/0314120 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing a thin layer of ferroelectric material1 Oct 2026US 2026/0305172 A1
- Graphene synthesis system24 Sep 2026US 2026/0286528 A1Destination 2D Inc.
- Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures24 Sep 2026US 2026/0293625 A1Tokyo Electron Limited
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Semiconductor device and manufacturing method thereof849US 7,910,490 B2Semiconductor Energy Laboratory Co.Ltd. · 2011
- Semiconductor device and manufacturing method thereof834US 7,932,521 B2Semiconductor Energy Laboratory Co.Ltd. · 2011