H10P 95/904
Of group iii-v semiconductors
Official title: {of Group III-V semiconductors}
H10P95/904 (Of group iii-v semiconductors) appears on 317 US grants and 284 published applications in this corpus.
Search patents in H10P- Granted patents
- 317
- Published applications
- 284
- Assignees
- 177
- Inventors
- 728
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 9 | 0 |
| 1986 | 6 | 0 |
| 1987 | 6 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 7 | 0 |
| 1991 | 9 | 0 |
| 1992 | 3 | 0 |
| 1993 | 10 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 5 | 1 |
| 2002 | 6 | 9 |
| 2003 | 5 | 10 |
| 2004 | 3 | 5 |
| 2005 | 4 | 5 |
| 2006 | 5 | 1 |
| 2007 | 2 | 4 |
| 2008 | 1 | 5 |
| 2009 | 2 | 3 |
| 2010 | 2 | 4 |
| 2011 | 2 | 1 |
| 2012 | 1 | 7 |
| 2013 | 3 | 9 |
| 2014 | 7 | 5 |
| 2015 | 9 | 25 |
| 2016 | 20 | 36 |
| 2017 | 30 | 29 |
| 2018 | 23 | 22 |
| 2019 | 19 | 21 |
| 2020 | 13 | 18 |
| 2021 | 15 | 16 |
| 2022 | 13 | 16 |
| 2023 | 16 | 8 |
| 2024 | 7 | 7 |
| 2025 | 6 | 12 |
| 2026 | 4 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method and apparatus for dry-cleaning AlN heater for semiconductor fabrication equipment1 Sep 2026US 12,727,420 B2WONIK QNC Corporation
- Method of manufacturing semiconductor device5 May 2026US 12,622,190 B2Denso Corporation
- Method of manufacturing nitride semiconductor device21 Apr 2026US 12,610,756 B2Denso Corporation
- Schottky diode and manufacturing method thereof10 Feb 2026US 12,550,344 B2Enkris Semiconductor, Inc.
- Technique for GaN epitaxy on insulating substrates16 Sep 2025US 12,417,914 B2Texas Instruments Incorporated
- Method for manufacturing group 3 nitride semiconductor template with improved bonding layer quality27 Aug 2026US 2026/0255934 A1Wavelord Co., Ltd
- Iii-v compound semiconductor layer stacks on strain-relieved semiconductor substrates20 Aug 2026US 2026/0247648 A1GLOBALFOUNDRIES U. S. Inc.
- Method for surface treatment of light-emitting element, method of manufacturing display device comprising light-emitting element provided using ink, and electronic device comprising display device13 Aug 2026US 2026/0239909 A1Samsung Display Co., Ltd.
- Diffusion suppression in high-temperature annealing of nitrides12 Mar 2026US 2026/0076116 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Technique for GaN Epitaxy on Insulating Substrates8 Jan 2026US 2026/0011553 A1Texas Instruments Incorporated
Most cited
By later US patents
- Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations469US 9,929,011 B2Ultratech, Inc. · 2018
- High electron mobility transistor213US 5,796,127 AMitsubishi Denki Kabushiki Kaisha · 1998
- Dislocation density reduction in gallium arsenide on silicon heterostructures100US 5,208,182 AKopin Corporation · 1993
- Defect-free semiconductor templates for epitaxial growth84US 7,101,444 B2NL-Nanosemiconductor GmbH · 2006
- Defect-free semiconductor templates for epitaxial growth and method of making same80US 6,784,074 B2NSC-Nanosemiconductor GmbH · 2004