Schottky diode and manufacturing method thereof

A Schottky diode, comprising:

• a first semiconductor layer;
• a heterostructure layer located on the first semiconductor layer;
• a cap layer located on the heterostructure layer, the cap layer at least comprising a first area and a second area;
• a passivation layer located on the cap layer, the passivation layer comprising a first groove and a second groove, the first groove and the second groove at least penetrating through the passivation layer, and the first groove corresponding to the first area;
• a first electrode formed in correspondence to the first groove, the first electrode being in contact with the first area and/or the first electrode being in contact with the heterostructure layer;
• and
• a second electrode located in the second groove;
• wherein the Schottky diode further comprises a second semiconductor layer, the second semiconductor layer is located in the first groove below the first electrode and above the first area, and the second semiconductor layer extends from a first sidewall and terminates before a second sidewall of the first groove in a horizontal direction.