H10P 95/902
For the formation of pn junctions without addition of impurities
Official title: {for the formation of PN junctions without addition of impurities}
H10P95/902 (For the formation of pn junctions without addition of impurities) appears on 25 US grants and 33 published applications in this corpus.
Search patents in H10P- Granted patents
- 25
- Published applications
- 33
- Assignees
- 15
- Inventors
- 69
- Latest grant
- 3 Aug 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 0 | 2 |
| 2010 | 2 | 3 |
| 2011 | 1 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 2 |
| 2015 | 2 | 4 |
| 2016 | 2 | 8 |
| 2017 | 6 | 3 |
| 2018 | 4 | 1 |
| 2019 | 1 | 4 |
| 2020 | 2 | 1 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals41US 4,505,759 A1985
- Method of making a pn-junction in a semiconductor element7US 6,376,321 B1Sentron AG · 2002
- Increasing the doping efficiency during proton irradiation7US 9,054,035 B2Infineon Technologies AG · 2015
- Semiconductor device with a semiconductor body containing hydrogen-related donors4US 9,564,495 B2Infineon Technologies AG · 2017
- Method of processing a semiconductor substrate by thermal activation of light elements3US 7,670,966 B2Commissariat A L' Energie Atomique · 2010