Increasing the doping efficiency during proton irradiation
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Johannes Laven, Franz Josef Niedernostheide, Frank Dieter Pfirsch
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Abstract
A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.
Claims7
A semiconductor component having a first and a second side, said semiconductor component comprising at least one n-doped section having a distribution of a doping concentration in the direction from the first side to the second side which has a first region having a first substantially constant doping concentration and a second region having a second substantially constant doping concentration, wherein the distribution of the doping concentration has a maximum between the first region and the second region, and wherein the maximum of the doping concentration is greater than 2.5×1014 cm−3.
Dependencies are inferred from the claim text.