Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors

Abstract

Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. Based on the information about the cumulative dopant concentration and a dissociation rate of the hydrogen-related donors, a main temperature profile is determined for dissociating a defined portion of the hydrogen-related donors. The semiconductor substrate is subjected to a main heat treatment applying the main temperature profile to obtain, in the surface portion, a final total dopant concentration deviating from a target dopant concentration by not more than 15%.

Dependencies are inferred from the claim text.