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US 10,867,809 B2Granted
Laser anneal process
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChun-Ti Lu, Meng-Chin Lee, Fang-Liang Lu, Chee-Wee Liu
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Abstract
A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.
Claims20
A method comprising:
- forming a doped region on a semiconductor substrate with a first process gas having a dopant gas, wherein the doped region comprises an impurity therein;
- and
- performing a laser anneal process to the doped region with a second process gas having the dopant gas, wherein the dopant gas and the impurity comprise the same chemical element, and a partial pressure of the dopant gas during forming the doped region is less than a partial pressure of the dopant gas during the laser anneal process.
A method comprising:
- introducing a dopant gas into a chamber;
- forming a doped source/drain region on a semiconductor substrate;
- and
- performing a laser anneal process on the doped source/drain region under a process pressure greater than about 1 atm, wherein the laser anneal process is performed in the chamber, and a partial pressure of the dopant gas during the laser anneal process is in a range from about 1E-1 torr to about 10 torr.
1 more element
A method comprising:
- forming source/drain regions on a substrate in a chamber;
- introducing a dopant gas above the source/drain region in the chamber, wherein the dopant gas comprises gas-phase dopants therein;
- stopping the introducing of the dopant gas, then increasing a partial pressure of the gas-phase dopants in the chamber;
- and
- annealing the source/drain regions by a laser through the gas-phase dopants.
2 more elements
Dependencies are inferred from the claim text.