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US 9,564,495 B2Granted
Semiconductor device with a semiconductor body containing hydrogen-related donors
AssigneeInfineon Technologies AG
InventorsJohannes Georg Laven, Hans-Joachim Schulze, Moriz Jelinek, Werner Schustereder
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Abstract
A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.
Claims7
A semiconductor device, comprising:
- a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors, wherein a concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.
Dependencies are inferred from the claim text.