Method of making a pn-junction in a semiconductor element
AssigneeSentron AG
InventorsRadivoje Popovic, Alexandre Pauchard, Alexis Rochas
Life of this patent
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Abstract
A pn-junction in a semiconductor element is made in that, within a zone of a first conductivity type, by means of implantation, a first and second zone of a second conductivity type are formed which are initially separated from each other, with subsequent diffusion processes, as a result of lateral diffusion, the first and second zones combine into a connected well, by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.
Claims4
Method for making a pn-junction in a semiconductor element to serve as a photosensor, wherein
- within an area of a first conductivity type, by means of implantation, a first and a second zone of a second conductivity type are formed which are initially separated from each other,
- with subsequent diffusion processes, as a result of lateral diffusion, the first and the second zone combine into a connected well,
- by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.
Dependencies are inferred from the claim text.