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US 12,518,976 B2Granted
Nitride-containing STI liner for SIGE channel
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Wen Chiu, Szu-Ying Chen, Lun-Kuang Tan
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Abstract
A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.
Claims20
A semiconductor device, comprising:
- an epitaxial semiconductor layer that protrudes vertically out of a substrate in a first direction;
- a first liner disposed beside the epitaxial semiconductor layer in a second direction different from the first direction, wherein the first liner contains crystal silicon and an implanted material;
- a second liner disposed beside the first liner in the second direction, wherein the second liner and the first liner have different material compositions, wherein a maximum dimension of the second liner in the second direction is greater than a maximum dimension of the first liner in the second direction;
- and
- an isolation structure disposed over the second liner.
2 more elements
A semiconductor device, comprising:
- a channel component of a P-type transistor;
- a crystal silicon liner formed on a side surface of the channel component, wherein the crystal silicon liner is doped with nitrogen;
- a dielectric liner formed on a side surface of the crystal silicon liner, wherein the crystal silicon liner has substantially co-planar uppermost surfaces with the channel component or with the dielectric liner;
- and
- a shallow trench isolation (STI) structure disposed over the dielectric liner.
2 more elements
A semiconductor device, comprising:
- a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe);
- an epi-silicon layer disposed on a sidewall of the fin structure, wherein the epi-silicon layer contains nitrogen;
- one or more dielectric liner layers disposed on the epi-silicon layer, wherein the epi-silicon layer and the one or more dielectric liner layers have substantially co-planar bottommost surfaces;
- and
- a dielectric isolation structure disposed over the one or more dielectric liner layers.
2 more elements
Dependencies are inferred from the claim text.