H10P 90/192
Irregularly shaped charge trapping layers
Official title: {irregularly shaped charge trapping layers}
H10P90/192 (Irregularly shaped charge trapping layers) appears on 29 US grants and 35 published applications in this corpus.
Search patents in H10P- Granted patents
- 29
- Published applications
- 35
- Assignees
- 15
- Inventors
- 50
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 0 | 2 |
| 2017 | 2 | 2 |
| 2018 | 5 | 6 |
| 2019 | 3 | 1 |
| 2020 | 2 | 3 |
| 2021 | 3 | 1 |
| 2022 | 2 | 6 |
| 2023 | 2 | 4 |
| 2024 | 3 | 3 |
| 2025 | 2 | 4 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Device with airgap structure14 Apr 2026US 12,604,735 B2GLOBALFOUNDRIES U. S. Inc.
- Integrated structure with trap rich regions and low resistivity regions24 Mar 2026US 12,588,282 B2GLOBALFOUNDRIES U. S. Inc.
- Multi-function substrate11 Nov 2025US 12,471,379 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Back-gate effect control via doping30 Sep 2025US 12,432,991 B2Murata Manufacturing Co., Ltd.
- Semiconductor structure26 Nov 2024US 12,154,958 B2United Microelectronics Corp.
- Back-gate effect control via doping25 Dec 2025US 2025/0393268 A1Murata Manufacturing Co., Ltd.
- Multi-function substrate20 Nov 2025US 2025/0359336 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Back-gate effect control via doping6 Feb 2025US 2025/0048691 A1Murata Manufacturing Co., Ltd.
- Semiconductor structure30 Jan 2025US 2025/0040195 A1United Microelectronics Corp.
- Method for producing an advanced substrate for hybrid integration14 Nov 2024US 2024/0379410 A1Soitec
Most cited
By later US patents
- SOI substrate having a high heavy metal gettering effect for semiconductor device86US 5,773,152 ANEC Corporation · 1998
- Managed substrate effects for stabilized SOI FETs16US 10,546,747 B2pSemi Corporation · 2020
- Managed substrate effects for stabilized SOI FETs13US 10,276,371 B2pSemi Corporation · 2019
- Managed substrate effects for stabilized SOI FETs4US 10,971,359 B2pSemi Corporation · 2021
- System on chip fully-depleted silicon on insulator with rf and mm-wave integrated functions3US 9,899,415 B1International Business Machines Corporation · 2018