Multi-function substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
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Abstract
The present disclosure relates to an integrated chip. The integrated chip includes an epitaxial layer arranged on a semiconductor body. A trap-rich layer is arranged on the epitaxial layer, a dielectric layer is arranged on the trap-rich layer, and an active semiconductor layer is arranged on the dielectric layer. A semiconductor material is arranged on the epitaxial layer and laterally beside the active semiconductor layer. The epitaxial layer continuously extends from directly below the trap-rich layer to directly below the semiconductor material.
Claims20
An integrated chip, comprising:
- an epitaxial layer arranged on a semiconductor body;
- a trap-rich layer arranged on the epitaxial layer;
- a dielectric layer arranged on the trap-rich layer;
- an active semiconductor layer arranged on the dielectric layer;
- and
- a semiconductor material arranged on the epitaxial layer and laterally beside the active semiconductor layer, wherein the epitaxial layer continuously extends from directly below the trap-rich layer to directly below the semiconductor material.
An integrated chip, comprising:
- an epitaxial layer over a semiconductor body;
- a polysilicon layer over the epitaxial layer;
- a first dielectric over the polysilicon layer;
- an active semiconductor layer over the first dielectric;
- a semiconductor material over the epitaxial layer and laterally beside the active semiconductor layer;
- and
- a gap fill structure arranged laterally between the active semiconductor layer and the semiconductor material, wherein the gap fill structure is over the epitaxial layer and wherein the active semiconductor layer and the semiconductor material vertically extend to a height of a topmost surface of the gap fill structure.
An integrated chip, comprising:
- a trap-rich layer arranged over a base substrate, wherein one or more defects are disposed within the base substrate;
- a first dielectric layer arranged over the trap-rich layer;
- an active semiconductor layer arranged over the first dielectric layer;
- a semiconductor material arranged over the base substrate and laterally beside the active semiconductor layer in a cross-sectional view, wherein the semiconductor material is directly over the one or more defects;
- and
- a gap fill structure entirely laterally confined between an outermost sidewall of the semiconductor material and outermost sidewalls of the trap-rich layer, the first dielectric layer, and the active semiconductor layer in the cross-sectional view.
Dependencies are inferred from the claim text.