Device with airgap structure
AssigneeGlobalFoundries U.S. Inc.
InventorsUppili S. Raghunathan, Vibhor Jain, Siva P. Adusumilli, Yves T. Ngu, Johnatan A. Kantarovsky, Sebastian T. Ventrone
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.
Claims14
A structure comprising:
- a semiconductor substrate comprising a trap-rich region;
- plural airgap structures within the semiconductor substrate, wherein the plural airgap structures are within the trap-rich region;
- at least one deep trench isolation structure laterally surrounding the plural airgap structures and extending into the semiconductor substrate, wherein the plural airgap structures are bounded by the at least one deep trench structure and isolated from one another by pillars comprising the trap-rich region;
- and
- a device over the plural airgap structures.
A structure comprising:
- a semiconductor substrate comprising a trap-rich region of amorphous semiconductor material;
- shallow trench isolation structures above the trap-rich region;
- deep trench isolation structures extending into the semiconductor substrate to a depth below the shallow trench isolation structures;
- plural airgap structures bounded by the deep trench isolation structures and isolated from one another by pillars comprising the trap-rich region, wherein the plural airgap structures are within the trap-rich region;
- and
- a device above the plural airgap structures and the trap rich region.
A method comprising:
- forming a semiconductor substrate comprising a trap-rich region;
- forming plural airgap structures within the semiconductor substrate, wherein the plural airgap structures are within the trap-rich region;
- forming at least one deep trench isolation structure laterally surrounding the plural airgap structures and extending into the semiconductor substrate, wherein the plural airgap structures are bounded by the at least one deep trench structure and isolated from one another by pillars comprising the trap-rich region;
- and
- forming a device over the plural airgap structures.
Dependencies are inferred from the claim text.