Back to results
US 12,154,958 B2Granted
Semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a substrate, an insulating layer disposed on the substrate, an active layer disposed on the insulating layer, a plurality of isolation structures in the active layer to define a first device region and a non-device region of the active layer, a first semiconductor device formed on the first device region of the active layer, and a charge trap structure extending through the non-device region of the active layer. In a plane view, the charge trap structure and the non-device region form concentric closed ring surrounding the first device region.
Claims20
A semiconductor structure, comprising:
- a substrate;
- an insulating layer disposed on the substrate;
- an active layer disposed on the insulating layer;
- a plurality of isolation structures in the active layer to define a first device region and a non-device region of the active layer, wherein the isolation structures, the first device region and the non-device region occupy mutually exclusive regions of the active layer, and the isolation structures are at two sides of the non-device region and separate the first device region and the non-device region from each other;
- a first semiconductor device formed on the first device region of the active layer;
- and
- a charge trap structure extending through the non-device region of the active layer, wherein in a plane view, the charge trap structure and the non-device region form concentric closed rings surrounding the first device region.
4 more elements
Dependencies are inferred from the claim text.