H10P 50/696
Process specially adapted to improve the resolution of the mask
Official title: {Process specially adapted to improve the resolution of the mask}
H10P50/696 (Process specially adapted to improve the resolution of the mask) appears on 578 US grants and 606 published applications in this corpus.
Search patents in H10P- Granted patents
- 578
- Published applications
- 606
- Assignees
- 139
- Inventors
- 1,105
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 6 | 1 |
| 2002 | 6 | 5 |
| 2003 | 4 | 10 |
| 2004 | 4 | 11 |
| 2005 | 10 | 12 |
| 2006 | 11 | 22 |
| 2007 | 8 | 36 |
| 2008 | 12 | 32 |
| 2009 | 13 | 18 |
| 2010 | 32 | 35 |
| 2011 | 32 | 24 |
| 2012 | 25 | 23 |
| 2013 | 31 | 27 |
| 2014 | 34 | 41 |
| 2015 | 43 | 62 |
| 2016 | 62 | 39 |
| 2017 | 31 | 25 |
| 2018 | 25 | 26 |
| 2019 | 42 | 35 |
| 2020 | 33 | 35 |
| 2021 | 20 | 21 |
| 2022 | 21 | 19 |
| 2023 | 20 | 21 |
| 2024 | 17 | 14 |
| 2025 | 12 | 8 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same1 Sep 2026US 12,724,346 B2Inha University Research and Business Foundation
- Composition for forming silicon-containing metal hard mask and patterning process30 Jun 2026US 12,668,700 B2Shin-Etsu Chemical Co., Ltd.
- Semiconductor fin structure cut process24 Mar 2026US 12,588,449 B2Shanghai Huali Integrated Circuit Corporation
- Method of manufacturing a structure by asymmetrical ion bombardment of a capped underlying layer20 Jan 2026US 12,532,682 B2Adeia Semiconductor Solutions LLC
- Plasma processing method9 Jul 2026US 2026/0198241 A1Hitachi High-Tech Corporation
- Methods of forming semiconductor structures23 Apr 2026US 2026/0114198 A1Semiconductor Manufacturing International (Shanghai) Corporation
- Alternating hardmasks for tight-pitch line formation26 Mar 2026US 2026/0090305 A1Adeia Semiconductor Solutions LLC
- Semiconductor device, semiconducto structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process5 Feb 2026US 2026/0040854 A1Nanya Technology Corporation
- Semiconductor patterning and resulting structures23 Oct 2025US 2025/0329533 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process1,059US 5,328,810 AMicron Technology, Inc. · 1994
- Frequency doubling using spacer mask774US 7,807,578 B2APPLIED Materials.Inc. · 2010
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures742US 7,611,980 B2Micron Technology, Inc. · 2009