Plasma processing method
AssigneeHitachi High-Tech Corporation
InventorsJunpei KIHARA, Tomohiro TAKAMATSU
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Abstract
To provide a plasma processing method capable of achieving both prevention of pattern collapse and vertical processing shape, a plasma processing method of plasma-etching a film to be etched using a carbon-containing film mask and an inorganic film mask is provided that includes: a first step of plasma-etching the film to be etched using the carbon-containing film mask and the inorganic film mask; a second step of trimming the carbon-containing film mask after the first step; and a third step of over-etching the film to be etched after the second step.
Claims11
A plasma processing method of plasma-etching a film to be etched using a carbon-containing film mask and an inorganic film mask, the plasma processing method comprising:
- a first step of plasma-etching the film to be etched using the carbon-containing film mask and the inorganic film mask;
- a second step of trimming the carbon-containing film mask after the first step;
- and
- a third step of over-etching the film to be etched after the second step.
Dependencies are inferred from the claim text.