Semiconductor fin structure cut process

A semiconductor fin structure cut process, wherein the semiconductor fin structure cut process comprises the following steps performed sequentially:

• providing a semiconductor substrate and forming a plurality of fin structures on the semiconductor substrate, a gap being formed between every two adjacent fin structures;
• depositing a first dielectric layer, the first dielectric layer being filled in the gaps so that all of the fin structures are connected into a whole to form a semiconductor with fins;
• forming a plurality of pattern layer strips on the semiconductor with fins, a groove being formed between every two adjacent pattern layer strips, an upper surface of the semiconductor with fins at positions of the grooves being exposed, the fin structures closest to each pattern layer strip in the semiconductor with fins being necessary fin structures, and remaining fin structures being unnecessary fin structures;
• attaching mask strips onto side surfaces of each pattern layer strip, the mask strips covering the necessary fin structures;
• and
• etching the semiconductor with fins on the basis of a pattern formed by the mask strips so that the unnecessary fin structures not covered by the mask strips are truncated.