H10P 50/66
Of conductive or resistive materials
Official title: of conductive or resistive materials
H10P50/66 (Of conductive or resistive materials) appears on 2,040 US grants and 2,291 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,040
- Published applications
- 2,291
- Assignees
- 519
- Inventors
- 4,366
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 5 | 0 |
| 1978 | 9 | 0 |
| 1979 | 5 | 0 |
| 1980 | 10 | 0 |
| 1981 | 9 | 0 |
| 1982 | 12 | 0 |
| 1983 | 9 | 0 |
| 1984 | 10 | 0 |
| 1985 | 7 | 0 |
| 1986 | 4 | 0 |
| 1987 | 13 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 12 | 0 |
| 1994 | 6 | 0 |
| 1995 | 7 | 0 |
| 1996 | 6 | 0 |
| 1997 | 7 | 0 |
| 1998 | 4 | 0 |
| 1999 | 16 | 0 |
| 2000 | 26 | 0 |
| 2001 | 39 | 24 |
| 2002 | 71 | 79 |
| 2003 | 55 | 69 |
| 2004 | 69 | 89 |
| 2005 | 52 | 78 |
| 2006 | 39 | 74 |
| 2007 | 42 | 57 |
| 2008 | 47 | 74 |
| 2009 | 42 | 43 |
| 2010 | 43 | 55 |
| 2011 | 45 | 38 |
| 2012 | 35 | 53 |
| 2013 | 44 | 73 |
| 2014 | 57 | 87 |
| 2015 | 85 | 137 |
| 2016 | 114 | 123 |
| 2017 | 97 | 81 |
| 2018 | 93 | 113 |
| 2019 | 120 | 128 |
| 2020 | 116 | 160 |
| 2021 | 117 | 123 |
| 2022 | 98 | 134 |
| 2023 | 70 | 123 |
| 2024 | 94 | 106 |
| 2025 | 98 | 100 |
| 2026 | 54 | 70 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation22 Sep 2026US 12,741,925 B2Tokuyama Corporation
- Semiconductor device preventing insulating layer peeling and method of manufacturing semiconductor device15 Sep 2026US 12,740,392 B2Sumitomo Electric Device Innovations, Inc.
- Etching compositions1 Sep 2026US 12,727,412 B2Fujifilm Electronic Materials U.S.A., Inc.
- Methods for wet atomic layer etching of tungsten using halogenation1 Sep 2026US 12,727,413 B2Tokyo Electron Limited
- Trench isolation with conductive structures18 Aug 2026US 12,713,689 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Trench isolation with conductive structures8 Oct 2026US 2026/0314033 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for etching polysilicon1 Oct 2026US 2026/0297425 A1Entegris, Inc.
- Etchant composition, method of patterning metal layer and method of producing display device using the same1 Oct 2026US 2026/0297755 A1Dongwoo Fine-Chem Co., Ltd.
- Method for controlled spalling of high fracture toughness materials1 Oct 2026US 2026/0305207 A1
- Semiconductor package and method of manufacturing the semiconductor package1 Oct 2026US 2026/0305403 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method for forming layer constituted by repeated stacked layers524US 9,018,093 B2ASM IP Holding B. V. · 2015
- Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias406US 4,789,648 AInternational Business Machines Corporation · 1988
- Low temperature system and method for CVD copper removal383US 5,897,379 ASharp Kabushiki Kaisha · 1999
- Chem-mech polishing method for producing coplanar metal/insulator films on a substrate381US 4,944,836 AInternational Business Machines Corporation · 1990
- Substrate manufacturing method and substrate processing apparatus260US 7,256,104 B2Canon Kabushiki Kaisha · 2007