Semiconductor device preventing insulating layer peeling and method of manufacturing semiconductor device

A semiconductor device comprising:

• a substrate;
• a first insulating layer provided over the substrate;
• a first metal layer provided on the first insulating layer;
• a second metal layer provided on the first metal layer;
• and
• a second insulating layer covering the first metal layer and the second metal layer,
• wherein an upper surface of the first metal layer has a first region that is in contact with the second metal layer, and a second region that is separated from the second metal layer,
• wherein the second insulating layer is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer,
• wherein a width of the first metal layer is greater than or equal to a width of the second metal layer in a direction parallel to the substrate, and
• wherein adhesion between the second insulating layer and the first metal layer is higher than adhesion between the second insulating layer and the second metal layer.

A semiconductor device comprising:

• a substrate;
• a first insulating layer provided over the substrate;
• a first metal layer provided on the first insulating layer;
• a second metal layer provided on the first metal layer;
• and
• a second insulating layer covering the first metal layer and the second metal layer,
• wherein an upper surface of the first metal layer has a first region that is in contact with the second metal layer, and a second region that is separated from the second metal layer,
• wherein the second insulating layer is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer,
• wherein a width of the first metal layer is greater than or equal to a width of the second metal layer in a direction parallel to the substrate,
• wherein the side surface of the second metal layer has a curved surface, and
• wherein the curved surface is curved in a direction in which a center of an osculating circle is located inside the curved surface when viewed from the second metal layer.

A method of manufacturing a semiconductor device, comprising:

• forming a first insulating layer on a substrate;
• forming a first metal layer on the first insulating layer;
• forming a seed layer on the first metal layer;
• forming a plating layer on the seed layer to obtain a second metal layer including the seed layer and the plating layer;
• etching the second metal layer such that an upper surface of the first metal layer has a first region that is in contact with the second metal layer and a second region that is separated from the second metal layer;
• and
• forming a second insulating layer that is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer.

A method of manufacturing a semiconductor device, comprising:

• forming a first insulating layer on a substrate;
• forming a third metal layer on the first insulating layer;
• forming a second metal layer on the third metal layer;
• forming an etching mask covering the second metal layer;
• forming a first metal layer from the third metal layer by etching the third metal layer exposed from the etching mask, an upper surface of the first metal layer having a first region that is in contact with the second metal layer and a second region that is separated from the second metal layer;
• removing the etching mask;
• and
• forming a second insulating layer that is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer.