Back to results
US 2026/0297425 A1Published application
Method for etching polysilicon
AssigneeEntegris, Inc.
InventorsSteven M. Bilodeau, Daniela White
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeEntegris, Inc.
InventorsSteven M. Bilodeau, Daniela White
Estimating the term…
The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.
A method for etching polysilicon on a microelectronic device having silicon nitride and polysilicon surfaces, the method comprising contacting the device with a composition comprising:
A method for etching polysilicon on a microelectronic device having silicon nitride and polysilicon surfaces, the method comprising contacting the device with a composition consisting of:
A method for etching polysilicon on a microelectronic device having silicon nitride and polysilicon surfaces, the method comprising contacting the device with a composition consisting essentially of:
Dependencies are inferred from the claim text.