H10P 50/644
Anisotropic liquid etching
Official title: {Anisotropic liquid etching (H10P50/61 takes precedence)}
H10P50/644 (Anisotropic liquid etching) appears on 869 US grants and 826 published applications in this corpus.
Search patents in H10P- Granted patents
- 869
- Published applications
- 826
- Assignees
- 312
- Inventors
- 1,686
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 6 | 0 |
| 1978 | 7 | 0 |
| 1979 | 7 | 0 |
| 1980 | 7 | 0 |
| 1981 | 7 | 0 |
| 1982 | 10 | 0 |
| 1983 | 8 | 0 |
| 1984 | 8 | 0 |
| 1985 | 4 | 0 |
| 1986 | 8 | 0 |
| 1987 | 6 | 0 |
| 1988 | 4 | 0 |
| 1989 | 12 | 0 |
| 1990 | 11 | 0 |
| 1991 | 9 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 8 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 7 | 0 |
| 2000 | 10 | 0 |
| 2001 | 8 | 4 |
| 2002 | 12 | 11 |
| 2003 | 13 | 12 |
| 2004 | 6 | 11 |
| 2005 | 11 | 26 |
| 2006 | 11 | 23 |
| 2007 | 17 | 21 |
| 2008 | 11 | 22 |
| 2009 | 16 | 24 |
| 2010 | 25 | 19 |
| 2011 | 18 | 33 |
| 2012 | 23 | 49 |
| 2013 | 31 | 37 |
| 2014 | 38 | 38 |
| 2015 | 43 | 53 |
| 2016 | 53 | 51 |
| 2017 | 38 | 53 |
| 2018 | 46 | 39 |
| 2019 | 47 | 40 |
| 2020 | 43 | 51 |
| 2021 | 38 | 42 |
| 2022 | 28 | 40 |
| 2023 | 33 | 40 |
| 2024 | 28 | 43 |
| 2025 | 34 | 27 |
| 2026 | 20 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatus for treating substrate and method for treating a substrate6 Oct 2026US 12,754,475 B2Semes Co., Ltd.
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,692 B2Nanya Technology Corporation
- Semiconductor device with catalytic conductive layer and method for fabricating the same6 Oct 2026US 12,757,693 B2Nanya Technology Corporation
- Equipment and process technologies for catalyst influenced chemical etching18 Aug 2026US 12,713,866 B2Board of Regents, The University of Texas System
- Semiconductor device and method of manufacture28 Jul 2026US 12,696,733 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of manufacturing thereof24 Sep 2026US 2026/0293206 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fin field-effect transistor and method of forming the same13 Aug 2026US 2026/0239728 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of semiconductor structure30 Jul 2026US 2026/0223649 A1Winbond Electronics Corp.
- Etching composition, etching method, method for manufacturing semiconductor device, and method for manufacturing gate-all-around-type transistor23 Jul 2026US 2026/0209601 A1Mitsubishi Chemical Corporation
Most cited
By later US patents
- FinFETs with contact-all-around532US 9,406,804 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of making an integrated, microminiature electric-to-fluidic valve283US 4,966,646 AThe Board of Trustees of the Leland Stanford University · 1990
- Method for thinning a bonding wafer238US 8,476,165 B2Tokyo Electron Limited · 2013
- Etch thinning techniques for wafer-to-wafer vertical stacks229US 6,908,565 B2Intel Corporation · 2005
- Material removal method for forming a structure171US 6,261,964 B1Micron Technology, Inc. · 2001