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US 9,406,804 B2Granted
FinFETs with contact-all-around
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Tung Ying Lee
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure includes a semiconductor substrate, a semiconductor fin over the semiconductor substrate, a gate stack on a top surface and a sidewall of the semiconductor fin, a source/drain region on a side of the gate stack, and a contact plug encircling a portion of the source/drain region.
Claims20
An integrated circuit structure comprising:
- a semiconductor substrate;
- a semiconductor fin over the semiconductor substrate;
- a gate stack on a top surface and a sidewall of the semiconductor fin;
- a source/drain region on a side of the gate stack;
- and
- a contact plug encircling a first portion of the source/drain region.
3 more elements
An integrated circuit structure comprising:
- a semiconductor substrate;
- insulation regions extending into the semiconductor substrate, wherein the insulation regions comprise first top surfaces and second top surfaces lower than the first top surfaces;
- a semiconductor fin over the first top surfaces of the insulation regions;
- a gate stack on a top surface and sidewalls of the semiconductor fin;
- and
- a source/drain region on a side of the gate stack, wherein the source/drain region comprises:
- a first portion having opposite sidewalls that are substantially parallel to each other, wherein the first portion is lower than the first top surfaces and higher than the second top surfaces of the insulation regions;
- and
- a second portion over the first portion, wherein the second portion is physically disconnected from the first portion.
6 more elements
An integrated circuit structure comprising:
- a semiconductor substrate;
- a semiconductor fin over the semiconductor substrate;
- a gate stack on a top surface and sidewalls of the semiconductor fin;
- a source/drain region on a side of the gate stack, wherein the source/drain region comprises:
- a first portion;
- and
- a second portion over the first portion;
- a silicide layer comprising:
- a first portion overlapping, and contacting a top surface of, the first portion of the source/drain region;
- and
- a second portion overlapped by, and contacting a bottom surface of, the second portion of the source/drain region;
- and
- a contact plug, wherein a portion of the contact plug physically separates the first portion and the second portion of the silicide layer from each other.
10 more elements
Dependencies are inferred from the claim text.