Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Jou Lian, Yao-Wen Hsu, Neng-Jye Yang, Li-Min Chen, Chia-Wei Wu, Kuan-Lin Chen, Kuo-Bin Huang
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Abstract
A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.
Claims20
A method of manufacturing an integrated circuit device, the method comprising:
- reacting 1-(2-hydroxyethyl)-2-pyrrolidinone with titanium oxide located within a spacer material;
- removing a portion of the spacer material at a rate of no greater than about 4.2 Å/min;
- and
- depositing a dielectric material in physical contact with a remaining portion of the spacer material.
A method of manufacturing an integrated circuit device, the method comprising:
- depositing a mandrel material;
- patterning the mandrel material to form a first opening;
- lining the first opening with titanium oxide;
- forming a second opening directly over the first opening, the second opening having a first depth after the forming the second opening;
- and
- reducing the first depth to a second depth without removing more than about 5.61 Å of the titanium oxide.
A method of manufacturing an integrated circuit device, the method comprising:
- depositing titanium oxide over a patterned mandrel layer, at least a portion of the titanium oxide extending into openings that extend through the patterned mandrel layer;
- depositing a bottom layer, a middle layer, and a photoresist over the titanium oxide;
- exposing the titanium oxide through the bottom layer, the middle layer, and the photoresist;
- after the exposing, removing the middle layer, wherein the removing the middle layer removes the titanium oxide at a rate of less than about 4.2 Å/min;
- patterning the titanium oxide into spacers adjacent to the patterned mandrel layer;
- and
- removing at least a portion of the patterned mandrel layer adjacent to the spacers.
Dependencies are inferred from the claim text.