US 2026/0223649 A1 · MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

Abstract

A manufacturing method of a semiconductor structure is provided. The manufacturing method includes the following steps. A gate structure is formed on a silicon substrate. Doped regions are formed in the silicon substrate on two sides of the gate structure. A dielectric layer is formed on the silicon substrate to cover the gate structure and the doped regions. Holes are formed in the dielectric layer to expose the doped regions, wherein a lower region of each of the holes is located in the doped region. An undoped silicon layer is formed in the lower region of each of the holes, wherein a size of silicon grains of the undoped silicon layer is smaller than that of the silicon substrate. A metal layer is formed on the undoped silicon layer. A heat treatment is performed to transform the metal layer and the undoped silicon layer into a metal silicide layer.

Claims19

Dependent claims

A manufacturing method of a semiconductor structure, comprising:

forming a gate structure on a silicon substrate;
forming doped regions in the silicon substrate on two sides of the gate structure;
forming a dielectric layer on the silicon substrate to cover the gate structure and the doped regions;
forming holes in the dielectric layer to expose the doped regions, wherein a lower region of each of the holes is located in the doped region;
forming an undoped silicon layer in the lower region of each of the holes, wherein a size of silicon grains of the undoped silicon layer is smaller than a size of silicon grains of the silicon substrate;
forming a metal layer on the undoped silicon layer;
and
performing a thermal treatment to transform the metal layer and the undoped silicon layer into a metal silicide layer.

5 more elements

Dependencies are inferred from the claim text.

Manufacturing method of semiconductor structure

Life of this patent

Manufacturing method of semiconductor structure

Life of this patent

Abstract

Claims19