Etching composition, etching method, method for manufacturing semiconductor device, and method for manufacturing gate-all-around-type transistor
AssigneeMitsubishi Chemical Corporation
InventorsKen HARADA, Tatsunobu SUZUKI, Mari ABE
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Abstract
An etching composition that includes a quaternary ammonium salt having 8 or more carbon atoms and selectively dissolves silicon over silicon germanium, and may further include a chelating agent, an etching method comprising etching a structure that contains silicon and silicon germanium by using the etching composition, a method for manufacturing a semiconductor device, and a method for manufacturing a gate-all-around-type transistor using the etching composition.
Claims13
An etching composition comprising a quaternary ammonium salt having 8 or more carbon atoms, wherein the etching composition selectively dissolves silicon over silicon germanium, and the etching composition excludes the water-miscible solvent.
Dependencies are inferred from the claim text.