H10P 14/3442
N-type
Official title: {N-type}
H10P14/3442 (N-type) appears on 2,018 US grants and 1,998 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,018
- Published applications
- 1,998
- Assignees
- 640
- Inventors
- 3,667
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 11 | 0 |
| 1978 | 11 | 0 |
| 1979 | 11 | 0 |
| 1980 | 12 | 0 |
| 1981 | 5 | 0 |
| 1982 | 5 | 0 |
| 1983 | 12 | 0 |
| 1984 | 14 | 0 |
| 1985 | 19 | 0 |
| 1986 | 16 | 0 |
| 1987 | 25 | 0 |
| 1988 | 20 | 0 |
| 1989 | 36 | 0 |
| 1990 | 20 | 0 |
| 1991 | 14 | 0 |
| 1992 | 18 | 0 |
| 1993 | 27 | 0 |
| 1994 | 25 | 0 |
| 1995 | 18 | 0 |
| 1996 | 22 | 0 |
| 1997 | 21 | 0 |
| 1998 | 27 | 0 |
| 1999 | 22 | 0 |
| 2000 | 24 | 0 |
| 2001 | 31 | 19 |
| 2002 | 39 | 46 |
| 2003 | 32 | 52 |
| 2004 | 39 | 44 |
| 2005 | 39 | 51 |
| 2006 | 32 | 59 |
| 2007 | 28 | 49 |
| 2008 | 30 | 52 |
| 2009 | 40 | 45 |
| 2010 | 52 | 40 |
| 2011 | 40 | 64 |
| 2012 | 40 | 88 |
| 2013 | 49 | 65 |
| 2014 | 67 | 108 |
| 2015 | 91 | 94 |
| 2016 | 85 | 86 |
| 2017 | 79 | 107 |
| 2018 | 83 | 91 |
| 2019 | 96 | 115 |
| 2020 | 117 | 150 |
| 2021 | 104 | 124 |
| 2022 | 78 | 97 |
| 2023 | 66 | 106 |
| 2024 | 89 | 123 |
| 2025 | 86 | 87 |
| 2026 | 38 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Gate structure for semiconductor device18 Aug 2026US 12,713,683 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Semiconductor structures with adjustable light-emitting wavelengths and manufacturing methods thereof4 Aug 2026US 12,701,827 B2Enkris Semiconductor, Inc.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
- Silicon carbide semiconductor device1 Oct 2026US 2026/0304856 A1Fuji Electric Co., Ltd.
- Microwave plasma cvd device27 Aug 2026US 2026/0253840 A1National Institute of Advanced Industrial Science and Technology
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Nozzle cleaning method, crystalline oxide film formation method, and film formation apparatus6 Aug 2026US 2026/0226613 A1Shin-Etsu Chemical Co., Ltd.
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device605US 6,017,779 ASeiko Epson Corporation · 2000
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Selective epitaxial formation of semiconductor films563US 8,278,176 B2ASM America, Inc. · 2012