H10P 14/3438
Doping during depositing
Official title: {Doping during depositing}
H10P14/3438 (Doping during depositing) appears on 3,736 US grants and 3,934 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,736
- Published applications
- 3,934
- Assignees
- 1,055
- Inventors
- 6,580
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 25 | 0 |
| 1977 | 18 | 0 |
| 1978 | 14 | 0 |
| 1979 | 19 | 0 |
| 1980 | 17 | 0 |
| 1981 | 10 | 0 |
| 1982 | 10 | 0 |
| 1983 | 15 | 0 |
| 1984 | 19 | 0 |
| 1985 | 25 | 0 |
| 1986 | 25 | 0 |
| 1987 | 29 | 0 |
| 1988 | 32 | 0 |
| 1989 | 47 | 0 |
| 1990 | 30 | 0 |
| 1991 | 27 | 0 |
| 1992 | 27 | 0 |
| 1993 | 37 | 0 |
| 1994 | 39 | 0 |
| 1995 | 24 | 0 |
| 1996 | 28 | 0 |
| 1997 | 29 | 0 |
| 1998 | 34 | 0 |
| 1999 | 40 | 0 |
| 2000 | 32 | 0 |
| 2001 | 41 | 22 |
| 2002 | 62 | 83 |
| 2003 | 50 | 78 |
| 2004 | 61 | 70 |
| 2005 | 59 | 86 |
| 2006 | 55 | 103 |
| 2007 | 49 | 104 |
| 2008 | 50 | 109 |
| 2009 | 75 | 131 |
| 2010 | 106 | 158 |
| 2011 | 97 | 166 |
| 2012 | 123 | 193 |
| 2013 | 125 | 184 |
| 2014 | 174 | 219 |
| 2015 | 204 | 233 |
| 2016 | 212 | 195 |
| 2017 | 186 | 194 |
| 2018 | 176 | 191 |
| 2019 | 172 | 213 |
| 2020 | 214 | 259 |
| 2021 | 183 | 209 |
| 2022 | 134 | 171 |
| 2023 | 138 | 191 |
| 2024 | 139 | 175 |
| 2025 | 134 | 138 |
| 2026 | 65 | 59 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Semiconductor doping method and an intermediate semiconductor device29 Sep 2026US 12,751,221 B2Beneq Oy
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
- Silicon carbide semiconductor device1 Oct 2026US 2026/0304856 A1Fuji Electric Co., Ltd.
- Microwave plasma cvd device27 Aug 2026US 2026/0253840 A1National Institute of Advanced Industrial Science and Technology
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Nozzle cleaning method, crystalline oxide film formation method, and film formation apparatus6 Aug 2026US 2026/0226613 A1Shin-Etsu Chemical Co., Ltd.
Most cited
By later US patents
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014