H10N 70/068
By processes specially adapted for achieving sub-lithographic dimensions
Official title: {by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers}
H10N70/068 (By processes specially adapted for achieving sub-lithographic dimensions) appears on 442 US grants and 506 published applications in this corpus.
Search patents in H10N- Granted patents
- 442
- Published applications
- 506
- Assignees
- 100
- Inventors
- 572
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 3 |
| 2002 | 4 | 7 |
| 2003 | 7 | 15 |
| 2004 | 8 | 10 |
| 2005 | 11 | 20 |
| 2006 | 10 | 28 |
| 2007 | 12 | 26 |
| 2008 | 18 | 39 |
| 2009 | 18 | 32 |
| 2010 | 28 | 21 |
| 2011 | 33 | 32 |
| 2012 | 19 | 14 |
| 2013 | 23 | 17 |
| 2014 | 23 | 35 |
| 2015 | 25 | 20 |
| 2016 | 26 | 16 |
| 2017 | 19 | 16 |
| 2018 | 12 | 7 |
| 2019 | 8 | 14 |
| 2020 | 16 | 19 |
| 2021 | 15 | 21 |
| 2022 | 16 | 28 |
| 2023 | 28 | 27 |
| 2024 | 18 | 13 |
| 2025 | 21 | 16 |
| 2026 | 6 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Stacked conductive bridge random access memory and access devices19 May 2026US 12,635,425 B2International Business Machines Corporation
- Trimming intermediate carbon layer to achieve nanometer scale patterning12 May 2026US 12,628,573 B2International Business Machines Corporation
- Method of forming a resistive memory device with ultra-thin barrier layer21 Apr 2026US 12,610,749 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Self-aligned, symmetric phase change memory element10 Feb 2026US 12,550,629 B2International Business Machines Corporation
- Semiconductor device and method for fabricating the same3 Feb 2026US 12,543,324 B2SK hynix Inc.
- Phase-change material memory devices and methods of forming the same6 Aug 2026US 2026/0231691 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for forming a resistive memory device with ultra-thin barrier layer25 Jun 2026US 2026/0182255 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming a hard mask with a tapered profile7 May 2026US 2026/0130116 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of forming thereof30 Apr 2026US 2026/0123293 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material device and methods for forming the same30 Apr 2026US 2026/0123294 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Method of making an integrated circuit electrode having a reduced contact area454US 6,117,720 AMicron Technology, Inc. · 2000
- Phase change material memory device435US 6,586,761 B2Intel Corporation · 2003
- Method for making small pore for use in programmable resistance memory element423US 6,613,604 B2Ovonyx, Inc. · 2003