Phase-change material memory devices and methods of forming the same

A phase-change memory device comprising:

• a bottom electrode;
• a top electrode;
• a phase-change material disposed between the top electrode and the bottom electrode, the phase-change material configured to switch between an amorphous state and a crystalline state in response to heating;
• a liner extending from the bottom electrode along a first side of the phase-change material to the top electrode;
• and
• an additional liner section extending along a second side of the phase-change material to the top electrode, wherein the second side is horizontally opposite the first side.

A method for fabricating a phase-change memory device, the method comprising:

• forming a bottom electrode and an oxide layer over the bottom electrode;
• depositing a liner over a top of the oxide layer;
• patterning and etching the liner and oxide layer to form an opening that exposes a top of the bottom electrode;
• depositing liner material over the liner and the opening that exposes the top of the bottom electrode to form a vertical portion of the liner extending upward from the bottom electrode;
• depositing a spacer adjacent to the vertical portion of the liner;
• depositing a phase-change material;
• depositing a top electrode over the phase-change material;
• and
• patterning and etching the top electrode and the phase-change material to define a PCRAM cell.