Self-aligned, symmetric phase change memory element
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Zuoguang Liu, Juntao Li, Arthur Gasasira
Life of this patent
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Abstract
A phase change memory element including at least one phase change material layer, and a heater conductor, wherein at least a portion of the heater conductor is circumferentially surrounded by the at least one phase change material layer. The phase change memory element is symmetrical. The phase change memory element can include a top electrode circumferentially surrounding and connected to the at least one phase change material layer, and a bottom electrode in contact with the heater conductor. The phase change memory element can include at least one resistive liner in contact with the at least one phase change material layer.
Claims20
A phase change memory element comprising:
- at least one phase change material layer;
- at least one resistive liner in contact with the at least one phase change material layer;
- and
- a heater conductor, wherein at least a first portion of the heater conductor is circumferentially surrounded by and in contact with the at least one phase change material layer and at least a second portion of the heater conductor is circumferentially surrounded by and in contact with the least one resistive liner.
A method for forming a phase change memory element comprising:
- providing a substrate;
- depositing a dielectric layer on the substrate;
- depositing a phase change material layer on the dielectric layer;
- depositing a resistive liner in contact with the phase change material layer;
- forming a via through the dielectric layer, and the phase change material layer;
- and the resistive liner;
- forming a heater conductor within the via, wherein at least a first portion of the heater conductor is circumferentially surrounded by and in contact with the phase change material layer and a second portion of the heater conductor is circumferentially surrounded by and in contact with the resistive liner;
- patterning the phase change material layer;
- and
- forming a top electrode circumferentially surrounding and connected to the phase change material layer.
A method for forming a phase change memory element comprising:
- providing a substrate;
- depositing a dielectric layer on the substrate;
- depositing at least one phase change material layer on the dielectric layer;
- depositing at least one resistive liner on the at least one phase change material layer;
- forming a via through the dielectric layer, the at least one phase change material layer, and the at least one resistive liner;
- forming a heater conductor within the via, wherein at least a portion of the heater conductor is circumferentially surrounded by the at least one phase change material layer and the at least one resistive liner;
- patterning the at least one phase change material layer and the at least one resistive liner;
- and
- forming a top electrode circumferentially surrounding and connected to the at least one phase change material layer and the at least one resistive liner.
Dependencies are inferred from the claim text.