H10N 70/061
Shaping switching materials
Official title: {Shaping switching materials}
H10N70/061 (Shaping switching materials) appears on 4,049 US grants and 4,807 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,049
- Published applications
- 4,807
- Assignees
- 383
- Inventors
- 3,640
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 9 | 0 |
| 2001 | 9 | 4 |
| 2002 | 14 | 23 |
| 2003 | 25 | 45 |
| 2004 | 36 | 68 |
| 2005 | 43 | 92 |
| 2006 | 59 | 138 |
| 2007 | 54 | 177 |
| 2008 | 99 | 254 |
| 2009 | 112 | 225 |
| 2010 | 219 | 269 |
| 2011 | 239 | 224 |
| 2012 | 207 | 229 |
| 2013 | 241 | 219 |
| 2014 | 278 | 271 |
| 2015 | 264 | 224 |
| 2016 | 231 | 197 |
| 2017 | 191 | 161 |
| 2018 | 152 | 139 |
| 2019 | 179 | 217 |
| 2020 | 240 | 331 |
| 2021 | 238 | 267 |
| 2022 | 209 | 276 |
| 2023 | 207 | 256 |
| 2024 | 191 | 183 |
| 2025 | 195 | 181 |
| 2026 | 90 | 137 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, memory cell and method of forming the same22 Sep 2026US 12,745,574 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Phase change material radio-frequency switch for low power consumption and methods for forming the same1 Oct 2026US 2026/0305186 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000