H10N 70/066
By filling of openings
Official title: {by filling of openings, e.g. damascene method}
H10N70/066 (By filling of openings) appears on 1,432 US grants and 1,681 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,432
- Published applications
- 1,681
- Assignees
- 208
- Inventors
- 1,779
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 2 |
| 2002 | 8 | 11 |
| 2003 | 10 | 24 |
| 2004 | 16 | 31 |
| 2005 | 19 | 32 |
| 2006 | 27 | 40 |
| 2007 | 16 | 56 |
| 2008 | 31 | 90 |
| 2009 | 37 | 78 |
| 2010 | 74 | 105 |
| 2011 | 82 | 75 |
| 2012 | 82 | 108 |
| 2013 | 101 | 90 |
| 2014 | 115 | 107 |
| 2015 | 112 | 81 |
| 2016 | 81 | 52 |
| 2017 | 55 | 57 |
| 2018 | 44 | 44 |
| 2019 | 67 | 81 |
| 2020 | 78 | 116 |
| 2021 | 91 | 79 |
| 2022 | 59 | 83 |
| 2023 | 56 | 71 |
| 2024 | 72 | 60 |
| 2025 | 63 | 59 |
| 2026 | 23 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same1 Sep 2026US 12,727,395 B2SK hynix Inc.
- Phase-change material (PCM) radio frequency (RF) switching device with novel spreader design1 Sep 2026US 12,727,397 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Phase-change random access memory device and method of forming the same1 Oct 2026US 2026/0305190 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of resistive memory device10 Sep 2026US 2026/0271306 A1United Microelectronics Corp.
- Resistive memory device10 Sep 2026US 2026/0271307 A1United Microelectronics Corp.
- Three-dimensional integrated sensing-memory-computing chip, method for manufacturing the same, and computing method therefor10 Sep 2026US 2026/0271629 A1Tsinghua University
- Heat-flow controlled phase change material device with sidewall liners and methods for forming the same20 Aug 2026US 2026/0247875 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998
- Method of making an integrated circuit electrode having a reduced contact area454US 6,117,720 AMicron Technology, Inc. · 2000
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Method and apparatus for forming an integrated circuit electrode having a reduced contact area383US 6,420,725 B1Micron Technology, Inc. · 2002
- Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same284US 6,150,253 AMicron Technology, Inc. · 2000