H10N 70/063
By etching of pre-deposited switching material layers
Official title: {by etching of pre-deposited switching material layers, e.g. lithography}
H10N70/063 (By etching of pre-deposited switching material layers) appears on 2,598 US grants and 3,130 published applications in this corpus.
Search patents in H10N- Granted patents
- 2,598
- Published applications
- 3,130
- Assignees
- 283
- Inventors
- 2,686
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 1 |
| 2002 | 8 | 13 |
| 2003 | 15 | 17 |
| 2004 | 16 | 28 |
| 2005 | 13 | 40 |
| 2006 | 29 | 85 |
| 2007 | 34 | 114 |
| 2008 | 54 | 134 |
| 2009 | 64 | 119 |
| 2010 | 130 | 153 |
| 2011 | 125 | 128 |
| 2012 | 119 | 126 |
| 2013 | 130 | 124 |
| 2014 | 165 | 143 |
| 2015 | 144 | 141 |
| 2016 | 144 | 142 |
| 2017 | 127 | 111 |
| 2018 | 115 | 98 |
| 2019 | 119 | 152 |
| 2020 | 181 | 245 |
| 2021 | 162 | 198 |
| 2022 | 160 | 216 |
| 2023 | 160 | 196 |
| 2024 | 146 | 146 |
| 2025 | 146 | 143 |
| 2026 | 74 | 117 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Semiconductor integrated circuit device with first memory cell and third memory cell, and manufacturing method therefor15 Sep 2026US 12,740,333 B2Xiamen Industrial Technology Research Institute Co., Ltd.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Phase change material radio-frequency switch for low power consumption and methods for forming the same1 Oct 2026US 2026/0305186 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Three-dimensional (3D) programmable device422US 6,501,111 B1Intel Corporation · 2002
- Single level metal memory cell using chalcogenide cladding387US 6,567,293 B1Ovonyx, Inc. · 2003