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US 12,635,425 B2Granted
Stacked conductive bridge random access memory and access devices
AssigneeInternational Business Machines Corporation
InventorsHiroyuki Miyazoe, Gloria Wing Yun Fraczak, Takashi Ando
Life of this patent
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Abstract
A semiconductor structure comprises a conductive bridge random access memory device and an access device connected in series with the conductive bridge random access memory device. The conductive bridge random access memory device and the access device are arranged in a vertical stack. The vertical stack has a sidewall profile that increases in width from a bottom surface of the vertical stack to a top surface of the vertical stack.
Claims19
A semiconductor structure, comprising:
- a conductive bridge random access memory device;
- and
- an access device connected in series with the conductive bridge random access memory device;
- wherein the conductive bridge random access memory device and the access device are arranged in a vertical stack;
- wherein a surface of a mixed ionic-electronic conductor (MIEC) based bi-polar current source element of the access device is disposed adjacent a surface of the conductive bridge random access memory device in the vertical stack;
- and
- wherein the vertical stack has a sidewall profile where each of the conductive bridge random access memory device and the access device has a width at its top surface that is less than a width at its bottom surface.
4 more elements
An integrated circuit, comprising:
- a crossbar array structure comprising a plurality of crosspoint devices each coupled at a first end to one of a plurality of conductive row wires and at a second end to one of a plurality of conductive column wires;
- wherein a given one of the plurality of crosspoint devices comprises a vertical stack of a conductive bridge random access memory device and an access device connected in series with the conductive bridge random access memory device, a surface of a mixed ionic-electronic conductor (MIEC) based bi-polar current source element of the access device being disposed adjacent a surface of the conductive bridge random access memory device in the vertical stack, the vertical stack having a sidewall profile where each of the conductive bridge random access memory device and the access device has a width at its top surface that is less than a width at its bottom surface.
A method comprising:
- forming a vertical stack comprising a conductive bridge random access memory device and an access device connected in series with the conductive bridge random access memory device, a surface of a mixed ionic-electronic conductor (MIEC) based bi-polar current source element of the access device being disposed adjacent a surface of the conductive bridge random access memory device in the vertical stack;
- and
- patterning the vertical stack utilizing a subtractive etching process to form a patterned vertical stack having a sidewall profile where each of the conductive bridge random access memory device and the access device has a width at its top surface that is less than a width at its bottom surface.
Dependencies are inferred from the claim text.