Semiconductor device and method for fabricating the same

Abstract

An semiconductor device may include a first conductive line; a second conductive line disposed to be spaced apart from the first conductive line; a variable resistance layer disposed between the first conductive line and the second conductive line; and an electrode layer which is disposed at least one of a first location between the first conductive lines and the variable resistance layer, or a second location between the variable resistance layer and the second conductive lines and includes a thickness dependent metal-insulator transition (TDMIT) material that exhibits an electrical resistance depending on a thickness of the TDMIT material.

Dependencies are inferred from the claim text.