H10N 50/01
Manufacture or treatment
H10N50/01 (Manufacture or treatment) appears on 4,855 US grants and 5,758 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,855
- Published applications
- 5,758
- Assignees
- 503
- Inventors
- 4,502
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 8 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 17 | 13 |
| 2002 | 26 | 45 |
| 2003 | 33 | 52 |
| 2004 | 69 | 104 |
| 2005 | 68 | 112 |
| 2006 | 65 | 106 |
| 2007 | 77 | 100 |
| 2008 | 60 | 102 |
| 2009 | 73 | 91 |
| 2010 | 79 | 121 |
| 2011 | 98 | 123 |
| 2012 | 105 | 145 |
| 2013 | 151 | 189 |
| 2014 | 214 | 295 |
| 2015 | 239 | 262 |
| 2016 | 275 | 347 |
| 2017 | 317 | 331 |
| 2018 | 270 | 313 |
| 2019 | 399 | 450 |
| 2020 | 417 | 522 |
| 2021 | 379 | 437 |
| 2022 | 318 | 333 |
| 2023 | 302 | 386 |
| 2024 | 284 | 305 |
| 2025 | 311 | 290 |
| 2026 | 161 | 184 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films6 Oct 2026US 12,757,639 B2International Business Machines Corporation
- Nitride seed layer with high thermal stability for growth of perpendicularly magnetized Heusler films6 Oct 2026US 12,757,640 B2Samsung Electronics Co., Ltd.
- MRAM device with tunnel barrier overhang29 Sep 2026US 12,751,211 B2International Business Machines Corporation
- MRAM device structure with improved top electrode29 Sep 2026US 12,751,212 B2International Business Machines Corporation
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Semiconductor device including memory structure and method for manufacturing the same1 Oct 2026US 2026/0301779 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistance effect element and magnetic memory1 Oct 2026US 2026/0304783 A1TDK Corporation
- Method for Manufacturing Memory Chip and Memory Chip Structure1 Oct 2026US 2026/0305178 A1Zhejiang Hikstor Technology Co., Ltd.
Most cited
By later US patents
- Waferless auto conditioning284US 8,784,676 B2Lam Research Corporation · 2014
- Alignment of MTJ stack to conductive lines in the absence of topography273US 7,223,612 B2Infineon Technologies AG · 2007
- Magnetic tunneling junction configuration and a method for making the same255US 6,897,532 B1Cypress Semiconductor Corporation · 2005
- Method of manufacturing a magnetoresistive-based device248US 8,747,680 B1Everspin Technologies, Inc. · 2014
- MTJ MRAM with stud patterning222US 8,772,888 B2Avalanche Technology, Inc. · 2014